power f-mos fets 2sK2276 2sK2276 silicon n-channel mos for switching n features l low on-resistance r ds(on) l high-speed switching n absolute maximum ratings (tc = 25?c) parameter drain-source breakdown voltage gate-source voltage drain current max drain current allowable power dissipation chan- nel temperature storage temperature symbol v dss v gss i d i dp *1 p d *2 t ch t stg rating 60 20 3 5 10 150 C55 to +150 unit v v a a w ?c ?c unit : mm 1 : gate 2 : drain 3 : source eiaj : sc-63 u type package n internal connection * 1 t 300s , duty cycle < 10% * 2 t c = 25?c n electrical characteristics (tc = 25?c) parameter drain-source cut-off current gate-source leakage current drain-source breakdown voltage gate threshold voltage drain-source on-resistance forward transadmittance input capacitance output capacitance feedback capacitance turn-on time fall time turn-off time (delay time) symbol i dss i gss v dss v th r ds(on) | y fs | c iss c oss c rss t on t f t d(off) condition v ds = 40v, v gs = 0 v gs =20v, v ds = 0 i d =1ma, v gs = 0 v ds =10v, i d =1ma v gs =10v, i d = 3a v ds =10v, i d = 3a v ds =10v, v gs = 0, f=1mhz v gs =10v, i d = 3a, r l =10 w min 60 1 2.4 ty p 0.135 4 400 210 80 29 53 97 max 10 1 2.5 0.2 unit a a v v w s pf pf pf ns ns ns g d s 3.0 0.1 4.35 0.1 5.3 0.1 6.5 0.1 7.3 0.1 0.8max. 4.6 0.1 0.85 0.1 0.75 0.1 3 1 2.3 0.1 1.8 0.1 1.0 0.2 1.0 0.1 5.5 0.1 0.2max. 0.5 0.1 0.05 to 0.15 2 9.8 0.1 marking 2.5 0.1
i d C v ds | y fs | C i d r ds(on) C i d i d C v gs c iss, c oss, c rss C v ds t on, t f, t d(off) C i d p d C ta area of safe operation (aso) r ds(on) C i d power f-mos fets 2sK2276 0 1 2 3 4 5 6 7 8 0 4 8 12 16 20 24 drain-source voltage v ds ( v ) drain current i d ( a ) t c =25?c p d =30w v gs =10v 3.5v 4v 2v 2.5v 3v 0 1 2 3 4 5 6 7 8 024681012 drain current i d ( a ) forward transadmittance | y fs | ( s ) v ds =10v t c =25?c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 024681012 drain current i d ( a ) drain-source on-resistance r ds(on) ( ) (1)v gs =10v (2)v gs =4v t c =25?c (1) (2) 0 2 4 6 8 10 12 14 16 024681012 gate-source voltage v gs ( v ) drain current i d ( a ) v ds =10v t c =25?c 1 0 102030405060 10 100 1000 10000 3 30 300 3000 drain-source voltage v ds ( v ) input capacitance, output capacitance, c iss , c oss , c rss (p f ) feedback capacitance f=1mhz t c =25?c c iss c oss c rss 0 20 40 60 80 100 120 140 160 024681012 drain current i d ( a ) switching time t on , t f , t d(off) ( ns ) v dd =30v v gs =10v t c =25?c t d (off) t f t on 0 10 20 30 40 50 60 0 40 80 120 160 ambient temperature ta ( ?c ) allowable power dissipation p d ( w ) (1) t c =ta (2) without heat sink (p d =2w) (1) (2) 0.01 1 0.1 1 10 100 0.03 0.3 3 30 10 100 1000 3 30 300 drain-source voltage v ds ( v ) drain current i d ( a ) non repetitive pulse t c =25?c i dp t=1ms t=1s t=10ms i d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 024681012 drain current i d ( a ) drain-source on-resistance r ds(on) ( ) v gs =10v 25?c t c =125?c ?5?c
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